Invited Presentations

The following invited presentations will be part of the scientific program:

M. Law (University of Florida)
Keynote - 20 Years of SISPAD: Adolescence of TCAD and further Perspectives

A. Juge (ST)
Device Level Modeling Challenges for Circuit Design Methodology in Presence of Variability

Y. Kamakura (Osaka University)
Full Band Monte Carlo Simulation of Impact Ionization in Wide Bandgap Semiconductors Based on Ab Initio Calculation

S. Jin (Samsung)
Performance Evaluation of FinFETs: from Multisubband BTE to DD Calibration

S. Datta (University of Notre Dame)
In Quest of the next Switch

M. Luisier (ETH Zurich)
Atomistic Simulation of Nanodevices

T. Ma (Synopsys):
Future Perspectives of TCAD in Industry


The conference dinner speech will be delivered by
S. Selberherr (TU Wien).