The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) has now for 20 years provided an international forum for the presentation of leading-edge research and development results in the area of process and device simulation. SISPAD is one of the longest-running conferences devoted to technology computer-aided design (TCAD) and advanced modeling of novel semiconductor devices and nano electronic structures.
The conference provides an opportunity for the presentation and discussion of the latest advances in modeling and simulation of semiconductor devices, processes, and equipment for integrated circuits.
The topics inlude but are not restricted to:
Process simulation and modeling based on continuum and/or atomistic approaches, including first-principles material design and growth simulation of nano-scale fabrication
Equipment simulation for etching, deposition, ion implantation, lithography, thermal and other processes including its link to feature-scale simulation
Material modeling, including growth and properties of silicides and high-k materials
Electronic transport in semiconductor materials and devices including among others band structure calculations, transport models, mobility enhancement in strained semiconductors, quasi-ballistic transport, tunneling currents across thin insulators
Device simulation including among others silicon and compound materials; bulk, SOI, and three-dimensional devices; logic, analog and power; steep subthreshold slope; NVMs; optoelectronic devices; sensors/biosensors; novel device concepts and materials
Interconnect modeling and algorithms including noise and parasitic effects
Models of VLSI device scaling limits, including quantum effects and novel devices
Compact modeling for circuit simulation, including high frequency and high power applications.
Integration of process, device and circuit simulation
Simulation of variability – systematic, pattern-dependent, statistical – at equipment, process, device and circuit level
Advanced numerical methods and algorithms including mesh generation/adaptation, user-interface and visualization, and high-performance computing.
Fundamental aspects of device modeling and simulation such as quantum and fluctuation issues, simulation of nano-scale novel devices such as QCA, SET, quantum neural nets and molecular devices
Benchmarking, calibration, and verification of simulators