SISPAD 2016 Best Paper Award and Best Poster Award

Best Paper Award

P. Lenarczyk, M. Luisier: "Physical Modeling of Ferroelectric Field-Effect Transistors in the Negative Capacitance Regime"   Download

The SISPAD 2016 Best Paper Award was presented at the SISPAD 2017 in Kamakura, Japan.
 

2nd rank: W.G. Vandenberghe, M.V. Fischetti, "Modeling Topological-Insulator Field-Effect Transistors using the Boltzmann Equation"   Download

3rd rank: Z. Stanojevic, M. Karner, O. Baumgartner, HW. Karner, C. Kernstock, H. Demel, F. Mitterbauer, "Phase-Space Solution of the Subband Boltzmann Transport Equation for Nano-Scale TCAD"   Download
 

Best Poster Award

M. Shin, W.J. Jeong, J. Lee, J. Seo: "First Principles Based NEGF Simulations of Si Nanowire FETs"   Download

The SISPAD 2016 Best Poster Award was presented at the SISPAD 2016 conference dinner on September 7, 2016.

© Anette Kradisch / Fraunhofer IISB

Best Poster Award presented by SISPAD 2016 Chairman Jürgen Lorenz to M. Shin (right), W.J. Jeong (left), J. Lee, J. Seo (Korea Advanced Institute of Science and Technology)